EMD30T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W EMT6
$0.49
Available to order
Reference Price (USD)
8,000+
$0.09690
16,000+
$0.08835
24,000+
$0.08265
56,000+
$0.07980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Rohm Semiconductor's EMD30T2R advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Rohm Semiconductor stands behind every EMD30T2R unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NXP USA Inc.
PBLS2001S,115
onsemi
NSVMUN531335DW1T1G
Toshiba Semiconductor and Storage
RN1911FE,LF(CT
Nexperia USA Inc.
NHUMH2X
Nexperia USA Inc.
PEMH19,115
Nexperia USA Inc.
PEMH13,115
Infineon Technologies
BCR141SH6327XTSA1
Diodes Incorporated
DDA144EUQ-7-F
onsemi
NSVMUN5312DW1T3G
Diodes Incorporated