EMF5XV6T5G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP SOT563
$0.11
Available to order
Reference Price (USD)
8,000+
$0.13740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing onsemi's EMF5XV6T5G advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. onsemi stands behind every EMF5XV6T5G unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 12V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Panasonic Electronic Components
XP0611100L
Toshiba Semiconductor and Storage
RN2902,LF(CT
Toshiba Semiconductor and Storage
RN4984,LXHF(CT
onsemi
NSBC123JDP6T5G
Panasonic Electronic Components
XN0438100L
onsemi
NSBA114TDXV6T1G
Rohm Semiconductor
UMH9NTN
Nexperia USA Inc.
NHUMH11X
Toshiba Semiconductor and Storage
RN1901,LXHF(CT
onsemi