NSBC123JDP6T5G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT963
$0.09
Available to order
Reference Price (USD)
8,000+
$0.06079
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with onsemi's NSBC123JDP6T5G Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. onsemi provides comprehensive technical resources for NSBC123JDP6T5G integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
Panasonic Electronic Components
XN0438100L
onsemi
NSBA114TDXV6T1G
Rohm Semiconductor
UMH9NTN
Nexperia USA Inc.
NHUMH11X
Toshiba Semiconductor and Storage
RN1901,LXHF(CT
onsemi
MUN5330DW1T1
Rohm Semiconductor
EMH3FHAT2R
onsemi
NSVEMD4DXV6T5G
Toshiba Semiconductor and Storage
RN2714,LF
Nexperia USA Inc.