EPC2010C
EPC
EPC
GANFET N-CH 200V 22A DIE OUTLINE
$6.88
Available to order
Reference Price (USD)
500+
$3.73500
1,000+
$3.15000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
EPC2010C by EPC is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, EPC2010C ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (7-Solder Bar)
- Package / Case: Die
Related Products
IXYS
IXTA1N120P
IXYS
IXFA6N120P
onsemi
NTTFS4928NTWG
onsemi
2SK4099LS
Vishay Siliconix
SISA04DN-T1-GE3
STMicroelectronics
STD64N4F6AG
Taiwan Semiconductor Corporation
TSM180N03PQ33 RGG
Fairchild Semiconductor
FDB4020P
onsemi
NTP095N65S3H
Infineon Technologies