EPC2034
EPC
EPC
GANFET N-CH 200V 48A DIE
$8.48
Available to order
Reference Price (USD)
500+
$5.02200
1,000+
$4.53600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
EPC2034 by EPC is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, EPC2034 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Texas Instruments
CSD19533Q5AT
onsemi
NTD4302G
Infineon Technologies
IPD60R460CEAUMA1
Fairchild Semiconductor
FDB2570
Diodes Incorporated
DMP3037LSS-13
Rohm Semiconductor
RSF015N06TL
Infineon Technologies
IPP024N06N3G
Toshiba Semiconductor and Storage
TK22E10N1,S1X
Vishay Siliconix
IRFI520GPBF
Infineon Technologies