EPC2100
EPC
EPC
GAN TRANS ASYMMETRICAL HALF BRID
$6.94
Available to order
Reference Price (USD)
500+
$4.71200
1,000+
$4.25600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2100 by EPC is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let EPC s EPC2100 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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