TPS1120DR
Texas Instruments
Texas Instruments
MOSFET 2P-CH 15V 1.17A 8-SOIC
$2.20
Available to order
Reference Price (USD)
2,500+
$0.90580
Exquisite packaging
Discount
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Boost your project s performance with Texas Instruments s TPS1120DR, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, TPS1120DR provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of TPS1120DR.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 1.17A
- Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 840mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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