EPC2108
EPC
EPC
GANFET 3 N-CH 60V/100V 9BGA
$1.91
Available to order
Reference Price (USD)
2,500+
$0.82600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2108 from EPC is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, EPC2108 delivers consistent quality. Contact us now to learn more and secure your supply of EPC s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V, 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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