F423MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$217.80
Available to order
Reference Price (USD)
1+
$217.80000
500+
$215.622
1000+
$213.444
1500+
$211.266
2000+
$209.088
2500+
$206.91
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's F423MR12W1M1B11BOMA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 0.2 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
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