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FCB125N65S3

onsemi
FCB125N65S3 Preview
onsemi
MOSFET N-CH 650V 24A TO263
$3.25
Available to order
Reference Price (USD)
1+
$3.25000
500+
$3.2175
1000+
$3.185
1500+
$3.1525
2000+
$3.12
2500+
$3.0875
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 181W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK-3 (TO-263-3)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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