SI7106DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 12.5A PPAK1212-8
$1.64
Available to order
Reference Price (USD)
3,000+
$0.61041
6,000+
$0.58175
15,000+
$0.56128
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SI7106DN-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI7106DN-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Vishay Siliconix
SI4134DY-T1-E3
Vishay Siliconix
SIDR170DP-T1-RE3
Infineon Technologies
IPP050N10NF2SAKMA1
onsemi
NVGS4111PT1G
Rohm Semiconductor
RCJ050N25TL
onsemi
FCPF9N60NTYDTU
Infineon Technologies
IPI65R190C
STMicroelectronics
STF11NM60ND
Toshiba Semiconductor and Storage
SSM3K56CT,L3F
onsemi