FCH125N60E
onsemi
onsemi
MOSFET N-CH 600V 29A TO247-3
$3.02
Available to order
Reference Price (USD)
450+
$3.20747
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FCH125N60E, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FCH125N60E is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMN1014UFDF-7
Vishay Siliconix
SIHP28N60EF-GE3
Vishay Siliconix
SI7456DP-T1-E3
Diodes Incorporated
DMN6040SVTQ-7
Vishay Siliconix
IRF9530PBF-BE3
Infineon Technologies
BSP295L6327
Fairchild Semiconductor
HUF76609D3
Fairchild Semiconductor
FDZ493P
Nexperia USA Inc.
BUK965R8-100E,118
Infineon Technologies