FCH190N65F-F085
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 650V 20.6A TO247-3
$3.33
Available to order
Reference Price (USD)
450+
$5.04664
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FCH190N65F-F085, a versatile Transistors - FETs, MOSFETs - Single solution from Fairchild Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3181 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STL3N65M2
onsemi
NVMTS0D7N06CLTXG
Toshiba Semiconductor and Storage
SSM3K15ACT,L3F
Renesas Electronics America Inc
RJK2076DPA-00#J5A
Infineon Technologies
BSZ146N10LS5ATMA1
Texas Instruments
CSD16411Q3
Infineon Technologies
IRF530NSTRLPBF
Infineon Technologies
IMW65R072M1HXKSA1
Diodes Incorporated
BS250FTA
STMicroelectronics