FCP22N60N
onsemi
onsemi
MOSFET N-CH 600V 22A TO220-3
$5.14
Available to order
Reference Price (USD)
1+
$4.94000
10+
$4.42900
100+
$3.65710
500+
$2.98800
1,000+
$2.54199
Exquisite packaging
Discount
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FCP22N60N by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FCP22N60N ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±45V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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