R8011KNXC7G
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 11
$5.27
Available to order
Reference Price (USD)
1+
$5.27000
500+
$5.2173
1000+
$5.1646
1500+
$5.1119
2000+
$5.0592
2500+
$5.0065
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with R8011KNXC7G, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust R8011KNXC7G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMJ70H1D3SK3-13
Infineon Technologies
ISC0703NLSATMA1
Diodes Incorporated
DMP21D0UFB-7
Infineon Technologies
IRFU7540PBF
STMicroelectronics
STL60P4LLF6
IXYS
IXFP34N65X3
onsemi
2N7000-D74Z
IXYS
IXFX170N20T
Micro Commercial Co
2N7002-TP
Nexperia USA Inc.