FCU2250N80Z
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 800V 2.6A I-PAK
$0.72
Available to order
Reference Price (USD)
1,800+
$0.50026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FCU2250N80Z, a versatile Transistors - FETs, MOSFETs - Single solution from Fairchild Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Fairchild Semiconductor
FDP070AN06A0
onsemi
NDS0610-G
Diodes Incorporated
DMPH6023SK3-13
Goford Semiconductor
GC11N65T
Infineon Technologies
IRF1404ZSTRLPBF
onsemi
FDB024N06
Infineon Technologies
IPD80R900P7ATMA1
Infineon Technologies
IPU95R2K0P7AKMA1
Infineon Technologies
IPZA60R120P7XKSA1
Infineon Technologies