FD650R17IE4BOSA2
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 930A 4150W
$579.46
Available to order
Reference Price (USD)
3+
$385.33667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FD650R17IE4BOSA2 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 930 A
- Power - Max: 4150 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT75DA120TG
Microchip Technology
APT40GL120JU3
Infineon Technologies
DF400R12KE3HOSA1
Infineon Technologies
F4200R17N3E4B58BPSA1
Infineon Technologies
FS50R07N2E4_B11
Infineon Technologies
FS75R06KE3BPSA1
Infineon Technologies
FZ2400R12HE4PB9HPSA1
Infineon Technologies
FS50R06YE3BOMA1
Fairchild Semiconductor
FMG1G100US60L
Infineon Technologies