FDB8030L
Fairchild Semiconductor
Fairchild Semiconductor
80A, 30V, 0.0035OHM, N-CHANNEL,
$3.30
Available to order
Reference Price (USD)
1+
$3.30000
500+
$3.267
1000+
$3.234
1500+
$3.201
2000+
$3.168
2500+
$3.135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDB8030L, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDB8030L meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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