FDD6692
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDD6692, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDD6692 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
UnitedSiC
UF3SC065040B7S
Rohm Semiconductor
RS3L110ATTB1
Rohm Semiconductor
RQ3E160ADTB
Micro Commercial Co
2N7002KW-TP
Fairchild Semiconductor
HUFA76645S3ST
Infineon Technologies
IRLML6346TRPBF
STMicroelectronics
STW35N60DM2
Texas Instruments
CSD17578Q3AT
Fairchild Semiconductor
FDS2170N3
Diodes Incorporated