FDBL0210N80
onsemi
onsemi
MOSFET N-CH 80V 240A 8HPSOF
$6.08
Available to order
Reference Price (USD)
2,000+
$3.05328
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FDBL0210N80 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FDBL0210N80 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
Related Products
Infineon Technologies
IPB100N04S2L03ATMA2
Panjit International Inc.
PJD6NA40_R2_00001
STMicroelectronics
STN3NF06L
Infineon Technologies
IPW65R050CFD7AXKSA1
Taiwan Semiconductor Corporation
TSM650P03CX RFG
Renesas Electronics America Inc
2SK3306B-S17-AY
STMicroelectronics
STFI5N95K3
IXYS
IXFR80N60P3
STMicroelectronics
STL30P3LLH6
Panjit International Inc.