FDD6680AS
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 30V 55A TO252
$0.52
Available to order
Reference Price (USD)
2,500+
$0.46863
5,000+
$0.44649
12,500+
$0.43068
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDD6680AS, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDD6680AS is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 60W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FDMS86252
Infineon Technologies
BSC019N04NSGATMA1
Micro Commercial Co
MCQ12N10Y-TP
Taiwan Semiconductor Corporation
TSM240N03CX RFG
onsemi
NTLJS2103PTAG
onsemi
FDBL9406L-F085
Vishay Siliconix
SQD40N10-25_GE3
STMicroelectronics
STB46N60M6
onsemi
FDFMA2N028Z
Vishay Siliconix