FDMC4D9P20X8
onsemi
onsemi
MOSFET P-CH 20V 18A/75A 8PQFN
$0.53
Available to order
Reference Price (USD)
1+
$0.53423
500+
$0.5288877
1000+
$0.5235454
1500+
$0.5182031
2000+
$0.5128608
2500+
$0.5075185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDMC4D9P20X8 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDMC4D9P20X8 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
Microchip Technology
DN2540N3-G-P003
IXYS
IXFN32N80P
Toshiba Semiconductor and Storage
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage
TK17V65W,LQ
Nexperia USA Inc.
PMPB12UNEAX
Microchip Technology
APT8043SFLLG
NXP USA Inc.
PMZB790SN,315
Renesas Electronics America Inc
UPA2742GR-E1-AT
Diodes Incorporated
DMP2075UVT-7
Vishay Siliconix