FDMS86105
onsemi
onsemi
MOSFET N-CH 100V 6A/26A 8PQFN
$2.01
Available to order
Reference Price (USD)
3,000+
$0.69438
6,000+
$0.66158
15,000+
$0.63815
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FDMS86105, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDMS86105 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
VN0300L-G-P002
Renesas Electronics America Inc
UPA1724G-E1-A
Renesas Electronics America Inc
UPA1804GR-9JG-E1-A
Infineon Technologies
IAUS300N08S5N014TATMA1
STMicroelectronics
STP9NM60N
IXYS
IXTA08N100D2-TRL
Infineon Technologies
IPB65R310CFDATMA2
Rohm Semiconductor
RD3L150SNFRATL
Nexperia USA Inc.
PSMN040-100MSEX
Infineon Technologies