FDN339AN
onsemi
onsemi
MOSFET N-CH 20V 3A SUPERSOT3
$0.54
Available to order
Reference Price (USD)
3,000+
$0.18073
6,000+
$0.16907
15,000+
$0.15741
30,000+
$0.14925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDN339AN by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDN339AN inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Nexperia USA Inc.
PSMN9R8-30MLC,115
Nexperia USA Inc.
PSMN013-100YSEX
STMicroelectronics
STF11N60DM2
IXYS
IXFR180N10
Vishay Siliconix
SISA35DN-T1-GE3
Vishay Siliconix
SIS698DN-T1-GE3
Panjit International Inc.
PJP13NA50_T0_00001
Infineon Technologies
IRFH7440TRPBF
onsemi
FDP2D9N12C
STMicroelectronics