FDP2D9N12C
onsemi
onsemi
PTNG 120V N-FET TO220
$4.35
Available to order
Reference Price (USD)
1+
$4.34963
500+
$4.3061337
1000+
$4.2626374
1500+
$4.2191411
2000+
$4.1756448
2500+
$4.1321485
Exquisite packaging
Discount
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Optimize your electronic systems with FDP2D9N12C, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDP2D9N12C provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 686µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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