FDP18N20F
onsemi
onsemi
MOSFET N-CH 200V 18A TO220-3
$1.50
Available to order
Reference Price (USD)
1+
$1.67000
10+
$1.48300
100+
$1.18060
500+
$0.92412
1,000+
$0.73759
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDP18N20F by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDP18N20F inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
NVMYS3D3N06CLTWG
Vishay Siliconix
SIHFZ48S-GE3
Vishay Siliconix
IRFBG20PBF-BE3
Taiwan Semiconductor Corporation
TSM900N06CH X0G
Infineon Technologies
BSS806NEH6327XTSA1
onsemi
NTD3813N-35G
Infineon Technologies
BUZ31H3046
Rohm Semiconductor
R6009KNJTL
Nexperia USA Inc.
BUK964R1-40E,118
IXYS