ZXMN10A07ZTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1A SOT89-3
$0.66
Available to order
Reference Price (USD)
1,000+
$0.26910
2,000+
$0.24765
5,000+
$0.23335
10,000+
$0.21905
25,000+
$0.20904
50,000+
$0.20800
Exquisite packaging
Discount
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Optimize your electronic systems with ZXMN10A07ZTA, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, ZXMN10A07ZTA provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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