FDT4N50NZU
onsemi
onsemi
POWER MOSFET, N-CHANNEL, UNIFETI
$1.42
Available to order
Reference Price (USD)
1+
$1.42000
500+
$1.4058
1000+
$1.3916
1500+
$1.3774
2000+
$1.3632
2500+
$1.349
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDT4N50NZU by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDT4N50NZU inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
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