FF23MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2 N-CH 1200V 50A MODULE
$125.38
Available to order
Reference Price (USD)
1+
$92.77000
Exquisite packaging
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Optimize your electronic circuits with Infineon Technologies s FF23MR12W1M1B11BOMA1, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how FF23MR12W1M1B11BOMA1 can elevate your design and operational efficiency.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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