FF450R07ME4BOSA1
Infineon Technologies
Infineon Technologies
GBT MODULE 650V 450A
$207.48
Available to order
Reference Price (USD)
1+
$207.48000
500+
$205.4052
1000+
$203.3304
1500+
$201.2556
2000+
$199.1808
2500+
$197.106
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF450R07ME4BOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD-3
Related Products
Microchip Technology
APT47GA60JD40
Infineon Technologies
FF150R12KT3GHOSA1
Infineon Technologies
FZ600R17KE4HOSA1
Infineon Technologies
FP35R12W2T7B11BOMA1
Fairchild Semiconductor
FMG1G300US60L
Fairchild Semiconductor
FMG1G150US60L
Infineon Technologies
F475R07W1H3B11ABOMA1
Fairchild Semiconductor
FP7G100US60
Infineon Technologies
FP150R12KT4PBPSA1
Fairchild Semiconductor