FGA25N120ANTDTU-F109
onsemi
onsemi
IGBT 1200V 50A 312W TO3P
$4.07
Available to order
Reference Price (USD)
1+
$3.63000
10+
$3.27400
450+
$2.57187
900+
$2.31998
1,350+
$1.97529
Exquisite packaging
Discount
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The FGA25N120ANTDTU-F109 Single IGBT from onsemi delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. onsemi's commitment to innovation ensures FGA25N120ANTDTU-F109 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
- Power - Max: 312 W
- Switching Energy: 4.1mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 50ns/190ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 350 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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