IKZ50N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 50A CO-PACK TO-247-4
$7.43
Available to order
Reference Price (USD)
1+
$7.51000
10+
$6.84000
240+
$5.75450
720+
$5.07956
1,200+
$4.49263
Exquisite packaging
Discount
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The IKZ50N65EH5XKSA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IKZ50N65EH5XKSA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 410µJ (on), 190µJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 20ns/250ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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