FGA25S125P-SN00337
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$2.78
Available to order
Reference Price (USD)
450+
$3.08533
Exquisite packaging
Discount
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Enhance your electronic designs with FGA25S125P-SN00337 Single IGBTs from Fairchild Semiconductor, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Fairchild Semiconductor's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
- Power - Max: 250 W
- Switching Energy: 1.09mJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 204 nC
- Td (on/off) @ 25°C: 24ns/502ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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