FGB7N60UNDF
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.03
Available to order
Reference Price (USD)
800+
$1.41671
Exquisite packaging
Discount
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Choose FGB7N60UNDF Single IGBTs by Fairchild Semiconductor for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Fairchild Semiconductor's reputation for quality makes FGB7N60UNDF a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 21 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
- Power - Max: 83 W
- Switching Energy: 99µJ (on), 104µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 5.9ns/32.3ns
- Test Condition: 400V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr): 32.3 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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