FGH40T65SPD-F155
onsemi
onsemi
IGBT 650V 80A 267W TO-247
$4.54
Available to order
Reference Price (USD)
1+
$4.78000
10+
$4.31100
450+
$3.38411
900+
$3.05196
1,350+
$2.59740
Exquisite packaging
Discount
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The FGH40T65SPD-F155 Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every FGH40T65SPD-F155 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 267 W
- Switching Energy: 1.16mJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 35 nC
- Td (on/off) @ 25°C: 16ns/37ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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