FGH60T65SHD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 120A TO247
$5.95
Available to order
Reference Price (USD)
1+
$6.35000
10+
$5.70300
450+
$4.43318
900+
$3.97788
1,350+
$3.35484
Exquisite packaging
Discount
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Optimize power control with FGH60T65SHD-F155 Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures FGH60T65SHD-F155 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 349 W
- Switching Energy: 1.69mJ (on), 630µJ (off)
- Input Type: Standard
- Gate Charge: 102 nC
- Td (on/off) @ 25°C: 26ns/87ns
- Test Condition: 400V, 60A, 6Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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