FII50-12E
IXYS
IXYS
IGBT H BRIDGE 1200V 50A I4PAK5
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Transform your power conversion systems with FII50-12E IGBT modules from industry leader IXYS. These array solutions excel in: matrix converters, RF amplifiers, and pulsed power applications with features like: symmetrical blocking voltage, low EMI generation, and short-circuit withstand time. IXYS guarantees top-tier quality control. Request samples or datasheets today!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™
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