FMB5551
onsemi
onsemi
TRANS 2NPN 160V 0.6A SUPERSOT-6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.11365
6,000+
$0.10676
15,000+
$0.09988
30,000+
$0.09184
Exquisite packaging
Discount
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Enhance your electronic systems with onsemi's FMB5551 BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 700mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
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