FP50R12N2T7PBPSA1
Infineon Technologies
Infineon Technologies
1200 V, 50 A PIM IGBT MODULE
$144.92
Available to order
Reference Price (USD)
1+
$144.92000
500+
$143.4708
1000+
$142.0216
1500+
$140.5724
2000+
$139.1232
2500+
$137.674
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency in your power electronics with the FP50R12N2T7PBPSA1 IGBT Module by Infineon Technologies. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Infineon Technologies leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
- Current - Collector Cutoff (Max): 4 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
Related Products
Infineon Technologies
FF450R33T3E3B5P3BPMA1
onsemi
NXH450B100H4Q2F2SG
Infineon Technologies
BSM150GB170DN2HOSA1
Microchip Technology
APTGL700DA120D3G
Infineon Technologies
FP35R12N2T7BPSA1
Infineon Technologies
DF450R17N2E4PB11BDLA1
IXYS
MUBW50-12A8
Microchip Technology
APTGLQ100DA120T1G
Infineon Technologies
FP25R12KT4B15BPSA1
IXYS