FP75R07N2E4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 650V 75A
$74.93
Available to order
Reference Price (USD)
1+
$74.93000
500+
$74.1807
1000+
$73.4314
1500+
$72.6821
2000+
$71.9328
2500+
$71.1835
Exquisite packaging
Discount
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Infineon Technologies's FP75R07N2E4B11BOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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