FZ1800R17KF4NOSA1
Infineon Technologies
Infineon Technologies
FZ1800R17 - INSULATED GATE BIPOL
$1,735.16
Available to order
Reference Price (USD)
1+
$1735.16000
500+
$1717.8084
1000+
$1700.4568
1500+
$1683.1052
2000+
$1665.7536
2500+
$1648.402
Exquisite packaging
Discount
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Infineon Technologies's FZ1800R17KF4NOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3560 A
- Power - Max: 13500 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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