FQA13N80-F109
onsemi
onsemi
MOSFET N-CH 800V 12.6A TO3PN
$4.47
Available to order
Reference Price (USD)
1+
$5.04000
10+
$4.51400
450+
$3.37747
900+
$2.76556
1,350+
$2.59072
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FQA13N80-F109 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FQA13N80-F109 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
Related Products
Taiwan Semiconductor Corporation
TSM033NA04LCR RLG
NXP USA Inc.
BUK6510-75C,127
onsemi
NDBA100N10BT4H
Infineon Technologies
BSC882N03MSGATMA1
onsemi
BFL4007-1E
Infineon Technologies
IPA60R600P7SXKSA1
IXYS
IXFY36N20X3
Vishay Siliconix
SI7114ADN-T1-GE3
Renesas Electronics America Inc
TBB1002BMTL-H
Nexperia USA Inc.