FQAF7N90
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 900V 5.2A TO3PF
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
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Fairchild Semiconductor presents FQAF7N90, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQAF7N90 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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