FQB50N06LTM
onsemi
onsemi
MOSFET N-CH 60V 52.4A D2PAK
$1.71
Available to order
Reference Price (USD)
800+
$0.70470
1,600+
$0.63997
2,400+
$0.59951
5,600+
$0.57119
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FQB50N06LTM by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FQB50N06LTM ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPI076N15N5AKSA1
Microchip Technology
APT50M75JFLL
STMicroelectronics
STD4N62K3
Rectron USA
RM12N650T2
Rohm Semiconductor
RQ6L035ATTCR
Fairchild Semiconductor
FQB5N60CTM
Vishay Siliconix
SISS63DN-T1-GE3
Renesas Electronics America Inc
NP80N04NHE-S18-AY
Infineon Technologies
BSC13DN30NSFDATMA1
Infineon Technologies