Shopping cart

Subtotal: $0.00

FQD13N06LTM

onsemi
FQD13N06LTM Preview
onsemi
MOSFET N-CH 60V 11A DPAK
$0.78
Available to order
Reference Price (USD)
2,500+
$0.25865
5,000+
$0.24176
12,500+
$0.23332
25,000+
$0.22872
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Taiwan Semiconductor Corporation

TSM090N03ECP ROG

Infineon Technologies

IRFB5615PBF

Infineon Technologies

AUIRFS3006-7TRL

Diodes Incorporated

DMT6030LFDF-7

Nexperia USA Inc.

PSMN1R9-40YSDX

Infineon Technologies

IPI80N04S3-03

NXP USA Inc.

BUK9509-75A,127

Diodes Incorporated

DMP2002UPS-13

Top