FQP44N10
onsemi
onsemi
MOSFET N-CH 100V 43.5A TO220-3
$1.95
Available to order
Reference Price (USD)
1+
$1.81000
10+
$1.63600
100+
$1.31450
500+
$1.02236
1,000+
$0.84710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FQP44N10, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FQP44N10 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 146W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
2SK3712-AZ
Microchip Technology
APT56M50B2
Vishay Siliconix
SIHP14N50D-GE3
Vishay Siliconix
IRFL210TRPBF
Infineon Technologies
BSL307SPL6327HTSA1
Vishay Siliconix
SISH101DN-T1-GE3
Infineon Technologies
SPD15P10PGBTMA1
Microchip Technology
APL602J
Renesas Electronics America Inc
NP89N04PUK-E1-AY
Nexperia USA Inc.