NP89N04PUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 90A TO263
$2.42
Available to order
Reference Price (USD)
1+
$2.42000
500+
$2.3958
1000+
$2.3716
1500+
$2.3474
2000+
$2.3232
2500+
$2.299
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of NP89N04PUK-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NP89N04PUK-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
PHB45NQ10T,118
Panjit International Inc.
PJMF390N65EC_T0_00001
Nexperia USA Inc.
PMPB29XNE,115
Fairchild Semiconductor
IRFS820B
Renesas Electronics America Inc
RJK60S7DPP-E0#T2
onsemi
NTD4865NT4G
Toshiba Semiconductor and Storage
SSM3J143TU,LF
Diodes Incorporated
DMP10H4D2S-7
Infineon Technologies
IPL60R065P7AUMA1
Nexperia USA Inc.