FQU13N10LTU
onsemi
onsemi
MOSFET N-CH 100V 10A IPAK
$0.85
Available to order
Reference Price (USD)
1+
$0.90000
10+
$0.78800
100+
$0.61230
500+
$0.45822
1,000+
$0.37019
Exquisite packaging
Discount
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Experience the power of FQU13N10LTU, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FQU13N10LTU is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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