SIHD5N50D-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 5.3A DPAK
$1.30
Available to order
Reference Price (USD)
3,000+
$0.58745
6,000+
$0.55987
15,000+
$0.54017
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SIHD5N50D-E3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SIHD5N50D-E3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI7104DN-T1-GE3
Fairchild Semiconductor
HUF76443S3S
Microchip Technology
APT6013JLL
Panjit International Inc.
PJW5N06A-AU_R2_000A1
Renesas Electronics America Inc
UPA2727UT1A-E1-AY
IXYS
IXFJ80N25X3
Panjit International Inc.
PJMD990N65EC_L2_00001
Vishay Siliconix
SI4114DY-T1-E3
onsemi
NTNS2K1P021ZTCG
Microchip Technology