FS150R07N3E4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 150A 430W
$146.38
Available to order
Reference Price (USD)
1+
$146.38000
500+
$144.9162
1000+
$143.4524
1500+
$141.9886
2000+
$140.5248
2500+
$139.061
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FS150R07N3E4B11BOSA1 IGBT Module from Infineon Technologies delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Infineon Technologies for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 430 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT50H60RT3G
Microchip Technology
APTGT150SK120G
Infineon Technologies
FF200R17KE4HOSA1
Infineon Technologies
FP50R12KT4PB11BPSA1
Infineon Technologies
FP15R06W1E3BOMA1
Vishay General Semiconductor - Diodes Division
VS-GT90SA120U
Microchip Technology
APT150GN60J
Infineon Technologies
FF400R12KT3HOSA1
Infineon Technologies
FP100R12N3T7B16BPSA1
Infineon Technologies